Distribution of 1.68 eV emission from diamond films
نویسندگان
چکیده
Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman lines. © 1998 American Institute of Physics. @S0021-8979~98!08816-1#
منابع مشابه
Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films
Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely rel...
متن کاملElectrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films
Nanocrystalline diamond ͑NCD͒ films are being intensively researched for a variety of potential applications, such as optical windows, electrochemical electrodes, and electron emitting surfaces for field emission displays. In this study Zr, Ti, Cu, and Pt on intrinsic and lightly sulfur-doped ͑n-type͒ NCD films were electrically and photoelectrically characterized. Intrinsic and sulfur-doped NCD fi...
متن کاملCharacterization of B-doped polycrystalline diamond films using thermally stimulated luminescence
The effect of different rates of boron incorporation during the growth in diamond on the thermoluminescence (TL) features of this material is investigated. TL studies performed between liquid nitrogen temperature (LNT) and 320 K show some phosphorescence and two other peaks at 226 and 266 K. For the first time, boron level in polycrystalline diamond films was identified by TL by an intense glow...
متن کاملModeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin films
Electron field emission has been observed from carbon thin films at relatively low electric fields. These films range from amorphous carbon to polycrystalline diamond films. There are many models that attempt to account for the electron field emission process observed in these films. The initial models that were based on the emission due purely to a negative electron affinity have now been modi...
متن کاملPhysical Properties of Reactively Sputter-Deposited C-N Thin Films
This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
متن کامل